- 您现在的位置：买卖IC网 > Sheet目录486 > NTB6410ANG (ON Semiconductor)MOSFET N-CH 100V 76A D2PAK
NTB6410AN, NTP6410AN,
NVB6410AN
N-Channel Power MOSFET
100 V, 76 A, 13 m W
Features
? Low R DS(on)
? High Current Capability
? 100% Avalanche Tested
? NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q101
Qualified and PPAP Capable
?
These Devices are Pb ? Free and are RoHS Compliant
V (BR)DSS
100 V
http://onsemi.com
R DS(ON) MAX
13 m W @ 10 V
N ? Channel
I D MAX
(Note 1)
76 A
D
MAXIMUM RATINGS (T J = 25 ° C Unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage ? Continuous
V DSS
V GS
100
$ 20
V
V
G
Continuous Drain
Current R q JC
Power Dissipation
R q JC
Steady
State
Steady
State
T C = 25 ° C
T C = 100 ° C
T C = 25 ° C
I D
P D
76
54
188
A
W
4
S
4
Pulsed Drain Current
t p = 10 m s
I DM
305
A
1
2
Operating Junction and Storage Temperature
Range
T J , T stg
? 55 to
+175
° C
TO ? 220AB
3
D 2 PAK
Drain
Source Current (Body Diode)
Single Pulse Drain ? to ? Source Avalanche
Energy (V DD = 50 Vdc, V GS = 10 Vdc,
I L(pk) = 57.7 A, L = 0.3 mH, R G = 25 W )
Lead Temperature for Soldering
Purposes, 1/8 ″ from Case for 10 Seconds
THERMAL RESISTANCE RATINGS
I S
E AS
T L
76
500
260
A
mJ
° C
1
2
3
4
CASE 221A CASE 418B
STYLE 5 STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
Parameter
Symbol
Max
Unit
3
1
3
Source
Gate
Source
Junction ? to ? Case (Drain) Steady State R q JC 0.8 ° C/W
Junction ? to ? Ambient (Note 1) R q JA 32
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
1
Gate
NTP
6410ANG
AYWW
2
Drain
NTB
6410ANG
AYWW
2
Drain
6410AN = Specific Device Code
G = Pb ? Free Device
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2012
January, 2012 ? Rev. 1
1
Publication Order Number:
NTB6410AN/D
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
NTB6411ANG
MOSFET N-CH 100V 72A D2PAK
NTB6413ANG
MOSFET N-CH 100V 42A D2PAK
NTB85N03T4G
MOSFET N-CH 28V 85A D2PAK
NTBV5605T4G
MOSFET P-CH 60V 18.5A D2PAK
NTC-04-0002
GU 7000 SERIES POWER CABLE
NTCDS3SG104GC4NB
THERMISTOR NTC GLASS 100KOHM AXL
NTCG104LH104HT1
THERMISTOR NTC 100K OHM 3% 0402
NTD110N02RT4
MOSFET N-CH 24V 12.5A DPAK
相关代理商/技术参数
NTB6410ANT4G
功能描述:MOSFET NFET D2PAK 100V 76A 13MOH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB6411AN
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 100 V, 72 A, 14 mΩ
NTB6411ANG
功能描述:MOSFET NFET D2PAK 100V 72A 14MO RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB6411ANT4G
功能描述:MOSFET NFET D2PAK 100V 75A 16MO RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB6412AN
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 100 V, 58 A, 18.2 mΩ
NTB6412AN_12
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET
NTB6412ANG
功能描述:MOSFET NFET D2PAK 100V 58A 18MO RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB6412ANT4G
功能描述:MOSFET NFET D2PAK 100V 59A 20MO RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube